M. Tapajna : rechercher sur Z-Library

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1

Gate Reliability Investigation in Normally-off p-type-GaN cap/AlGaN/GaN HEMTs under Forward Bias Stress

Tapajna, Milan, Hilt, Oliver, Bahat Treidel, Eldad, Wuerfl, Joachim, Kuzmik, Jan

Journal:

IEEE Electron Device Letters

Année:

2016

Langue:

english

Fichier:

PDF, 411 KB

english, 2016

2

Growth of gadolinium oxide films for advanced MOS structure

R. Lupták, K. Fröhlich, A. Rosová, K. Hušeková, M. Ťapajna, D. Machajdı́k, M. Jergel, J.P. Espinós, C. Mansilla

Journal:

Microelectronic Engineering

Année:

2005

Langue:

english

Fichier:

PDF, 331 KB

english, 2005

3

Measurement of generation parameters on Ru/HfO2/Si MOS capacitor

M. Ťapajna, L. Harmatha, K. Hušeková

Journal:

Solid-State Electronics

Année:

2006

Langue:

english

Fichier:

PDF, 157 KB

english, 2006

4

On the discrimination between bulk and surface traps in AlGaN/GaN HEMTs from trapping characteristics

Milan Ťapajna, Jose L. Jimenez, Martin Kuball

Journal:

physica status solidi (a)

Année:

2012

Langue:

english

Fichier:

PDF, 250 KB

english, 2012

5

AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes

Martin Kuball, Milan Ťapajna, Richard J.T. Simms, Mustapha Faqir, Umesh K. Mishra

Journal:

Microelectronics Reliability

Année:

2011

Langue:

english

Fichier:

PDF, 732 KB

english, 2011

6

The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability

Milan Ťapajna, Nicole Killat, Uttiya Chowdhury, Jose L. Jimenez, Martin Kuball

Journal:

Microelectronics Reliability

Année:

2012

Langue:

english

Fichier:

PDF, 350 KB

english, 2012

7

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

Tapajna, Milan, Killat, Nicole, Palankovski, Vassil, Gregusova, Dagmar, Cico, Karol, Carlin, Jean-Francois, Grandjean, Nicolas, Kuball, Martin, Kuzmik, Jan

Journal:

IEEE Transactions on Electron Devices

Année:

2014

Langue:

english

Fichier:

PDF, 3.66 MB

english, 2014

8

[IEEE 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2014.10.20-2014.10.22)] The Tenth International Conference on Advanced Semiconductor Devices and Microsystems - Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications

Tapajna, M., Valik, L., Kotara, P., Zhytnytska, R., Brunner, F., Hilt, O., Bahat-Treidel, E., Wurfl, J., Kuzmik, J.

Année:

2014

Langue:

english

Fichier:

PDF, 444 KB

english, 2014

9

Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO 2 gate dielectric grown by atomic layer deposition

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, E., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., Kuzmík, J.

Journal:

Applied Surface Science

Année:

2018

Langue:

english

Fichier:

PDF, 1.40 MB

english, 2018

10

Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., Kuzmík, J.

Journal:

Materials Science in Semiconductor Processing

Année:

2019

Langue:

english

Fichier:

PDF, 483 KB

english, 2019

11

Effect of Ti doping on Ta2O5 stacks with Ru and Al gates

A. Paskaleva, M. Tapajna, E. Atanassova, K. Frohlich, A. Vincze, E. Dobročka

Journal:

Applied Surface Science

Année:

2008

Langue:

english

Fichier:

PDF, 845 KB

english, 2008

12

Preparation of SrRuO3 films for advanced CMOS metal gates

K. Fröhlich, K. Hušeková, D. Machajdík, R. Lupták, M. Ťapajna, J.C. Hooker, F. Roozeboom, A.P. Kobzev, C. Wiemer, S. Ferrari, M. Fanciulli, C. Rossel, C. Cabral Jr

Journal:

Materials Science in Semiconductor Processing

Année:

2004

Langue:

english

Fichier:

PDF, 274 KB

english, 2004

13

Precise determination of metal effective work function and fixed oxide charge in MOS capacitors with high-κ dielectric

M. Ťapajna, K. Hušeková, J.P. Espinos, L. Harmatha, K. Fröhlich

Journal:

Materials Science in Semiconductor Processing

Année:

2006

Langue:

english

Fichier:

PDF, 214 KB

english, 2006

14

Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

V. Slugeň, L. Harmatha, M. Ťapajna, P. Ballo, P. Písečný, J. Šik, G. Kögel, V. Kršjak

Journal:

Applied Surface Science

Année:

2006

Langue:

english

Fichier:

PDF, 351 KB

english, 2006

15

Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks

A. Paskaleva, M. Ťapajna, E. Dobročka, K. Hušeková, E. Atanassova, K. Fröhlich

Journal:

Applied Surface Science

Année:

2011

Langue:

english

Fichier:

PDF, 318 KB

english, 2011

16

Electrical properties and thermal stability of MOCVD grown Ru gate electrodes for advanced CMOS technology

M. Ťapajna, K. Hušeková, D. Machajdík, A.P. Kobzev, T. Schram, R. Lupták, L. Harmatha, K. Fröhlich

Journal:

Microelectronic Engineering

Année:

2006

Langue:

english

Fichier:

PDF, 235 KB

english, 2006

17

Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1−xOy ultrathin gate dielectrics gated with Ru electrode

M. Ťapajna, A. Rosová, K. Hušeková, F. Roozeboom, E. Dobročka, K. Fröhlich

Journal:

Microelectronic Engineering

Année:

2007

Langue:

english

Fichier:

PDF, 628 KB

english, 2007

18

Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study

L. Harmatha, M. Ťapajna, V. Slugeň, P. Ballo, P. Písečný, J. Šik, G. Kögel

Journal:

Microelectronics Journal

Année:

2006

Langue:

english

Fichier:

PDF, 164 KB

english, 2006

19

Determining the generation lifetime in a MOS capacitor using linear sweep techniques

Milan Ťapajna, Ladislav Harmatha

Journal:

Solid-State Electronics

Année:

2004

Langue:

english

Fichier:

PDF, 254 KB

english, 2004

20

Thermal stability of advanced gate stacks consisting of a Ru electrode and Hf-based gate dielectrics for CMOS technology

D. Machajdík, A.P. Kobzev, K. Hušeková, M. Ťapajna, K. Fro˝hlich, T. Schram

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 256 KB

english, 2007

21

Growth of Ru/RuO2 layers with atomic vapor deposition on plain wafers and into trench structures

C. Manke, O. Boissière, U. Weber, G. Barbar, P.K. Baumann, J. Lindner, M. Tapajna, K. Fröhlich

Journal:

Microelectronic Engineering

Année:

2006

Langue:

english

Fichier:

PDF, 525 KB

english, 2006

22

Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

Janina Möreke, Milan Ťapajna, Michael J. Uren, Yi Pei, Umesh K. Mishra, Martin Kuball

Journal:

physica status solidi (a)

Année:

2012

Langue:

english

Fichier:

PDF, 594 KB

english, 2012

23

Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates

Tapajna, M., Killat, N., Moereke, J., Paskova, T., Evans, K. R., Leach, J., Li, X., Ozgur, U., Morkoc, H., Chabak, K. D., Crespo, A., Gillespie, J. K., Fitch, R., Kossler, M., Walker, D. E., Trejo, M.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 338 KB

english, 2012

24

[IEEE The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smolenice Castle, Slovakia (Oct. 17-21, 2004)] The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Growth and properties of ruthenium based metal gates for pMOS devices

Frohlich, K., Husekova, K., Machajdik, D., Luptak, R., Tapajna, M., Hooker, J.C.

Année:

2004

Langue:

english

Fichier:

PDF, 985 KB

english, 2004

25

Control of Threshold Voltage in GaN Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

Ťapajna, Milan, Kuzmík, Ján

Journal:

Japanese Journal of Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 636 KB

english, 2013

26

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Identification of electronic traps in AlGaN/GaN HEMTs using UV light-assisted trapping analysis

Tapajna, M., Simms, R. J. T., Faqir, M., Kuball, M., Pei, Y., Mishra, U. K.

Année:

2010

Langue:

english

Fichier:

PDF, 266 KB

english, 2010

27

[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Microstructure of HfO2 and HfxSi1-xOy Dielectric Films Prepared on Si for Advanced CMOS Application

Franta, M., Rosova, A., Tapajna, M., Dobrocka, E., Frohlich, K.

Année:

2006

Langue:

english

Fichier:

PDF, 3.69 MB

english, 2006

28

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Early stage degradation of InAlN/GaN HEMTs during electrical stress

Tapajna, M., Gregusova, D., Cico, K., Fedor, J., Carlin, J.-F., Grandjean, N., Killat, N., Kuball, M., Kuzmik, J.

Année:

2012

Langue:

english

Fichier:

PDF, 145 KB

english, 2012

29

Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E.-M., Hashizume, T., Kuzmík, J.

Journal:

Journal of Applied Physics

Année:

2014

Langue:

english

Fichier:

PDF, 1.30 MB

english, 2014

30

Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown

Kuzmik, J., Jurkovič, M., Gregušová, D., Ťapajna, M., Brunner, F., Cho, M., Meneghesso, G., Würfl, J.

Journal:

Journal of Applied Physics

Année:

2014

Langue:

english

Fichier:

PDF, 750 KB

english, 2014

31

Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al 2 O 3 /InAlN/GaN heterostructures

Ťapajna, M, Čičo, K, Kuzmík, J, Pogany, D, Pozzovivo, G, Strasser, G, Carlin, J-F, Grandjean, N, Fröhlich, K

Journal:

Semiconductor Science and Technology

Année:

2009

Langue:

english

Fichier:

PDF, 248 KB

english, 2009

32

Self-Heating in GaN Transistors Designed for High-Power Operation

Kuzmik, Jan, Tapajna, Milan, Valik, Lukas, Molnar, Marian, Donoval, Daniel, Fleury, Clement, Pogany, Dionyz, Strasser, Gottfried, Hilt, Oliver, Brunner, Frank, Wurfl, Joachim

Journal:

IEEE Transactions on Electron Devices

Année:

2014

Langue:

english

Fichier:

PDF, 2.37 MB

english, 2014

33

[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Energy Band Diagram of the Ru/Hf0.75Si0.25Oy/Si Gate Stack

Frohlich, K., Espinos, J. P., Tapajna, M., Husekova, K., Luptak, R.

Année:

2006

Langue:

english

Fichier:

PDF, 3.27 MB

english, 2006

34

[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode

Tapajna, M., Husekova, K., Frohlich, K., Dobrocka, E., Roozeboom, F.

Année:

2006

Langue:

english

Fichier:

PDF, 3.79 MB

english, 2006

35

[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - Low equivalent oxide thickness metal/insulator/metal structures for DRAM application

Hudec, B., Tapajna, M., Husekova, K., Aarik, J., Aidla, A., Frohlich, K.

Année:

2008

Langue:

english

Fichier:

PDF, 211 KB

english, 2008

36

[IEEE The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smolenice Castle, Slovakia (Oct. 17-21, 2004)] The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Thermal stability of ruthenium MOS gate electrodes

Tapajna, M., Cico, K., Luptak, R., Husekova, K., Frohlich, K., Harmmatha, L., Hooker, J.C., Roozeboom, F.

Année:

2004

Langue:

english

Fichier:

PDF, 1.05 MB

english, 2004

37

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Distribution of fixed oxide charge in MOS structures with ALD grown Al2O3 studied by capacitance measurements

Valik, L., Tapajna, M., Gucmann, F., Fedor, J., Siffalovic, P., Frohlich, K.

Année:

2012

Langue:

english

Fichier:

PDF, 148 KB

english, 2012

38

[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - Electrical characterization of Ru-and RuO2/Ta2O5 gate stacks for nanoscale DRAM technology

Tapajna, M., Dobrocka, E., Paskaleva, A., Husekova, K., Atanassova, E., Frohlich, K.

Année:

2008

Langue:

english

Fichier:

PDF, 1.74 MB

english, 2008

39

Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth

Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., Kuzmik, J.

Journal:

Applied Physics Letters

Année:

2014

Langue:

english

Fichier:

PDF, 949 KB

english, 2014

40

[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - On the identification of trap location in AlGaN/GaN HEMTs during electrical stress

Tapajna, M., Simms, R. J. T., Pei, Y., Mishra, U. K., Kuball, M.

Année:

2010

Langue:

english

Fichier:

PDF, 100 KB

english, 2010

41

Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E.-M., Kuzmík, J.

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2013

42

Interface States and Trapping Effects in Al 2 O 3 - and ZrO 2 /InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures

Ťapajna, Milan, Kuzmík, Jan, Čičo, Karol, Pogany, Dionyz, Pozzovivo, Gianmauro, Strasser, Gottfried, Abermann, Stephan, Bertagnolli, Emmerich, Carlin, Jean-François, Grandjean, Nicolas, Fröhlich, Karo

Journal:

Japanese Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 219 KB

english, 2009

43

[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - The Effect of Rapid Thermal Annealing on Oxygen Precipitation in Nitrogen Doped Silicon Substrate

Stuchlikova, L'., Harmatha, L., Tapajna, M., Ballo, P., Pisecny, P., Benkovic, M., Jakabovic, J.

Année:

2006

Langue:

english

Fichier:

PDF, 3.60 MB

english, 2006

44

Self-aligned normally-off metal-oxide-semiconductor n ++ GaN/InAlN/GaN high electron mobility transistors

Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J. -F., Grandjean, N., Kuzmík, J.

Journal:

physica status solidi (a)

Année:

2015

Langue:

english

Fichier:

PDF, 679 KB

english, 2015

45

Thermal Stability of Ru Gate Electrode on HfSiO Dielectric

Frohlich, Karol, Espinos, Juan Pedro, Vincze, Andrej, Tapajna, Milan, Husekova, Kristina

Journal:

MRS Proceedings

Année:

2006

Langue:

english

Fichier:

PDF, 673 KB

english, 2006

46

Thermal Stability of GdScO3 Dielectric Films Grown on Si and InAlN/GaN Substrates

Fröhlich, Karol, Vincze, Andrej, Dobročka, Edmund, Hušeková, Kristina, Čičo, Karol, Uherek, Frantisek, Lupták, Roman, Ťapajna, Milan, Machajdík, Daniel

Journal:

MRS Proceedings

Année:

2009

Langue:

english

Fichier:

PDF, 466 KB

english, 2009

47

TiO2-Based Metal-Insulator-Metal Structures for Future DRAM Storage Capacitors

Frohlich, K., Hudec, B., Tapajna, M., Husekova, K., Rosova, A., Elias, P., Aarik, J., Rammula, R., Kasikov, A., Arroval, T., Aarik, L., Murakami, K., Rommel, M., Bauer, A. J.

Journal:

ECS Transactions

Année:

2013

Langue:

english

Fichier:

PDF, 539 KB

english, 2013

48

Properties of Ru∕Hf[sub x]Si[sub 1−x]O[sub y]∕Si Metal Oxide Semiconductor Gate Stack Structures Grown by Atomic Vapor Deposition

Fröhlich, K., Lupták, R., Huseková, K., Cico, K., Tapajna, M., Weber, U., Baumann, P. K., Lindner, J., Espinós, J. P.

Journal:

Journal of The Electrochemical Society

Année:

2006

Langue:

english

Fichier:

PDF, 109 KB

english, 2006

49

Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta 2 O 5 /SiON/Si structures

Ťapajna, M, Paskaleva, A, Atanassova, E, Dobročka, E, Hušeková, K, Fröhlich, K

Journal:

Semiconductor Science and Technology

Année:

2010

Langue:

english

Fichier:

PDF, 535 KB

english, 2010

50

Technology of integrated self-aligned E/D-mode n ++ GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics

Blaho, M, Gregušová, D, Haščík, Š, Seifertová, A, Ťapajna, M, Šoltýs, J, Šatka, A, Nagy, L, Chvála, A, Marek, J, Carlin, J-F, Grandjean, N, Konstantinidis, G, Kuzmík, J

Journal:

Semiconductor Science and Technology

Année:

2016

Langue:

english

Fichier:

PDF, 657 KB

english, 2016